The influence of the characteristics of the TiOx-based cathodic layer on the photoelectric properties of the perovskite cell was investigated. The formed TiOx layer played the role of an n-type semiconductor. A 2 μm thick perovskite layer based on methylammonium lead iodide was deposited by centrifugation in an argon atmosphere at 85-90 °C. At the final stage, the cathodic and ...