Browsing by Author "Bain, F. M."

Now showing items 1-2 of 2

    • Continuous-wave and Q-switched operation of a compact, diode-pumped Yb3+:KY(WO4)2 planar waveguide laser 

      Bain, F. M.; Lagatsky, A. A.; Kurilchick, S. V.; Kisel, V. E.; Guretsky, S. A.; Luginets, A. M.; Kalanda, N. A.; Kolesova, I. M.; Kuleshov, N. V.; Sibbett, W.; Brown, C. T. A. (Optical Society of America, 2009)
      A diode-pumped LPE-grown Yb:KYW planar waveguide laser is demonstrated in a microchip monolithic cavity configuration. Output powers as high as 148mW and thresholds as low as 40mW were demonstrated during continuous-wave operation. Pulses of 170ns duration with maximum pulse energy of 44nJ at a 722kHz repetition rate were generated when Q-switched using a semiconductor saturable ...
      2012-01-23

    • Ultrafast laser inscribed Yb:KGd(WO4)2 and Yb:KY(WO4)2 channel waveguide lasers 

      Bain, F. M.; Lagatsky, A. A.; Thomson, R. R.; Psaila, N. D.; Kuleshov, N. V.; Kar, A. K.; Sibbett, W.; Brown, C. T. A. (Optical Society of America, 2009)
      We demonstrate laser action in diode-pumped microchip monolithic cavity channel waveguides of Yb:KGd(WO4)2 and Yb:KY(WO4)2 that were fabricated by ultrafast laser writing. The maximum output power achieved was 18.6 mW with a threshold of approximately 100 mW from an Yb:KGd(WO4)2waveguide laser operating at 1023 nm. The propagation losses for this waveguide structure were measured ...
      2012-01-23