Now showing items 1-2 of 2

    • Design of Peltier Element Based on Semiconductors with Hopping Electron Transfer via Defects 

      Poklonski, N. A.; Vyrko, S. A.; Kovalev, A. I.; Anikeev, I. I.; Gorbachuk, N. I. (БНТУ, 2021)
      The study of thermoelectric properties of crystalline semiconductors with structural defects is of practical interest in the development of radiation-resistant Peltier elements. In this case, the spectrum of energy levels of hydrogen-like impurities and intrinsic point defects in the band gap (energy gap) of crystal plays an important role. The purpose of this work is to analyze ...
      2021-03-18
    • Inductive Type Impedance of Mo/n-Si Barrier Structures Irradiated with Alpha Particles 

      Poklonski, N. A.; Kovalev, A. I.; Usenko, K. V.; Ermakova, E. A.; Gorbachuk, N. I.; Lastovski, S. B. (БНТУ, 2023)
      In silicon microelectronics, flat metal spirals are formed to create an integrated inductance. However, the maximum specific inductance of such spirals at low frequencies is limited to a value of the order of tens of microhenries per square centimeter. Gyrators, devices based on operational amplifiers with approximately the same specific inductance as spirals, are also used. ...
      2023-04-13