Browsing by Author "Griebner, U."

Now showing items 1-10 of 10

    • Continuous-wave microchip laser operation of YB-doped gallium garnets 

      Serres, J. M.; Jambunathan, V.; Loiko, P.; Mateos, X.; Yu, H.; Zhang, H.; Liu, J.; Lucianetti, A.; Mocek, T.; Yumashev, K.; Griebner, U.; Petrov, V.; Aguilo, M.; Diaz, F. (БНТУ, 2018)
      Continuous-wave microchip laser operation of YB-doped gallium garnets / J. M. Serres [и др.] // Приборостроение-2018 : материалы 11-й Международной научно-технической конференции, 14-16 ноября 2018 года, Минск, Республика Беларусь / редкол.: О. К. Гусев (председатель) [и др.]. – Минск : БНТУ, 2018. – С. 412-414.
      2019-05-03

    • CW Tm:KLu(WO4)2 microchip laser 

      Loiko, P. A.; Serres, J. M.; Mateos, X.; Yumashev, K. V.; Kuleshov, N. V.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (БНТУ, 2014)
      CW Tm:KLu(WO4)2 microchip laser / P. A. Loiko [и др.] // Приборостроение-2014 : материалы 7-й Международной научно-технической конференции (19–21 ноября 2014 года, Минск, Республика Беларусь) / ред. колл.: О. К. Гусев [и др.]. – Минск : БНТУ, 2014. – С. 231-232.
      2015-03-19

    • Graphene Q-Switched Compact Yb: YAG Laser 

      Serres, J. M.; Jambunathan, V.; Mateos, X.; Loiko, P.; Lucianetti, A.; Mocek, T.; Yumashev, K.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (2015)
      We describe a compact Yb: YAG laser Q-switched by a graphene-based saturable absorber and pumped by a laser diode at 932 or 969 nm. The compact laser generates a maximum average output power value of 185 mW at 1032 nm with a slope efficiency value of 12%. The shortest duration of the Q-switched pulse achieved is 228 ns at a repetition frequency of 285 kHz. The maximum pulse energy ...
      2018-03-06

    • Graphene Q-switched waveguide laser at 1.83 μm 

      Kifle, E.; Mateos, X.; Loiko, P. A.; Yumashev, K. V.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (БНТУ, 2016)
      Graphene Q-switched waveguide laser at 1.83 μm / E. Kifle [et al.] // Приборостроение-2016 : материалы 9-й международной научно-технической конференции, Минск, 23-25 ноября 2016 г. / Белорусский национальный технический университет ; редкол.: О. К. Гусев [и др.]. – Минск, 2016. – С. 236-237.
      2017-03-23

    • Ho:KLuW microchip laser intracavity pumped by a diode-pumped Tm:KLuW laser 

      Serres, J. M.; Loiko, P. A.; Mateos, X.; Yumashev, K. V.; Kuleshov, N. V.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (Springer, 2015)
      A compact intracavity-pumped microchip Ho laser is realized using stacked Tm:KLuW/Ho:KLuW crystals pumped by a laser diode at 805 nm; both crystals are cut for light propagation along the Ng optical indicatrix axis and emit with polarization along the Nm axis. Maximum CW output power of 285 mW is achieved at a wavelength of 2080 nm for 5.6 W absorbed pump power in the Tm:KLuW ...
      2018-09-14

    • Microchip laser operation of Tm,Ho:KLu(WO4)2 crystal 

      Loiko, P.; Serres, J. M.; Mateos, X.; Yumashev, K.; Kuleshov, N.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (2014)
      A microchip laser is realized on the basis of a monoclinic Tm,Ho-codoped KLu(WO4)2 crystal cut for light propagation along the Ng optical indicatrix axis. This crystal cut provides positive thermal lens with extremely weak astigmatism, S/M = 4%. High sensitivity factors, M = dD/dPabs, of 24.9 and 24.1 m−1/W for the mg- and pg- tangential planes are calculated with respect to the ...
      2017-11-15

    • Passive Q-switching of a Tm,Ho:KLu(WO4)2 microchip laser by a Cr:ZnS saturable absorber 

      Serres, Y. M.; Loiko, P. A.; Mateos, X.; Jambunathan, V.; Yasukevich, A. S.; Yumashev, K. V.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (Optical Society of America, 2016)
      A diode-pumped Tm;Ho:KLu WO42 microchip laser passively Q-switched with a Cr:ZnS saturable absorber generated an average output power of 131 mW at 2063.6 nm with a slope efficiency of 11% and a Q-switching conversion efficiency of 58%. The pulse characteristics were 14 ns∕9 μJ at a pulse repetition frequency of 14.5 kHz. With higher modulation depth of the saturable absorber, 9 ...
      2016-05-12

    • Passive Q-switching of Yb bulk lasers by a graphene saturable absorber 

      Loiko, P. A.; Serres, J. M.; Mateos, X.; Liu, G.; Zhang, H.; Yasukevich, A. S.; Yumashev, K. V.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (Springer, 2016)
      Compact Yb:KLu(WO4)2 and Yb:LuVO4 lasers diode-pumped at 978 nm are passively Q-switched by a single-layer graphene saturable absorber. The Yb:KLu(WO4)2 laser generated 165 ns/0.49 μJ pulses at 1030 nm with 170 mW average output power and 12 % slope efficiency. With the Yb:LuVO4 laser, 152 ns/0.83 μJ pulses were achieved. The output power reached 300 mW at 1024 nm, and the slope ...
      2016-05-11

    • Thermal Lensing and Multiwatt Microchip Laser Operation of Yb:YCOB Crystals 

      Loiko, P.; Serres, J. M.; Mateos, X.; Yu, H.; Zhang, H.; Liu, J.; Yumashev, K.; Griebner, U.; Petrov, V.; Aguilo, M.; Diaz, F. (2016)
      Thermal lensing is studied in monoclinic Yb:Ca4YO(BO3)(3) (Yb:YCOB) oxoborate crystals cut along the optical indicatrix axes. For all orientations, the thermal lens is positive. In the Z-cut crystal, the sensitivity factors of the thermal lens are MZ-X = 2.4 and MZ-Y = 2.8 m(-1)/W (for E parallel to X), and the astigmatism degree is as low as S/M = 14%. The positive thermal lens ...
      2018-03-18

    • Tm:KLu(WO4)2 microchip laser Q-switched by a graphene-based saturable absorber 

      Serres, J. M.; Loiko, P.; Mateos, X.; Yumashev, K.; Griebner, U.; Petrov, V.; Aguilo, M.; Diaz, F. (2015)
      We report on the first Tm-doped double tungstate microchip laser Q-switched with graphene using a Tm:KLu(WO4)2 crystal cut along the Ng dielectric axis. This laser generates a maximum average output power of 310 mW with a slope efficiency of 13%. At a repetition rate of 190 kHz the shortest pulses with 285 ns duration and 1.6 μJ energy are achieved.
      2017-11-18