Browsing by Author "Koltunowicz, T."

Now showing items 1-2 of 2

    • Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Implantation and DC Nitrogen Plasma Treatment 

      Frantskevich, N. V.; Mazanik, A. V.; Frantskevich, A. V.; Koltunowicz, T.; Zukowski, P. (2011)
      The general goal of this work is to investigate the defects formed on the surface of the Cz-Si wafers subjected to helium implantation, vacuum annealing and nitrogen plasma treatment. The performed scanning electron microscopy study has shown that in the general case two types of surface defects can be formed: cone-shaped inclusions with the base diameter of 0.2-2 mu m and the ...
      2018-03-10

    • Measurement stand for study properties of isolation materials using polarization method 

      Zukowski, P.; Koltunowicz, T.; Kozak, Cz.; Kierczynski, K.; Rogalski, P. (БНТУ, 2014)
      The article presents measurement stand, which is used to measure polarization and depolarization currents, using PDC method, in wet transformer oil-impregnated cellulose isolation. Maximum resolution of measured currents reaches 10-15 A. The accuracy of thermal stabilization, in three-electrode capacitor system, comes to 0,001 °C.
      2014-08-25