Browsing by Author "Mateos, X."

Now showing items 1-16 of 16

    • Continuous-wave microchip laser operation of YB-doped gallium garnets 

      Serres, J. M.; Jambunathan, V.; Loiko, P.; Mateos, X.; Yu, H.; Zhang, H.; Liu, J.; Lucianetti, A.; Mocek, T.; Yumashev, K.; Griebner, U.; Petrov, V.; Aguilo, M.; Diaz, F. (БНТУ, 2018)
      Continuous-wave microchip laser operation of YB-doped gallium garnets / J. M. Serres [и др.] // Приборостроение-2018 : материалы 11-й Международной научно-технической конференции, 14-16 ноября 2018 года, Минск, Республика Беларусь / редкол.: О. К. Гусев (председатель) [и др.]. – Минск : БНТУ, 2018. – С. 412-414.
      2019-05-03

    • Continuous-wave Tm:KY(WO4)2 waveguide laser 

      Kifle, E.; Mateos, X.; Aguilo, M.; Diaz, F.; Loiko, P. A.; Yumashev, K. V. (БНТУ, 2016)
      Continuous-wave Tm:KY(WO4)2 waveguide laser / E. Kifle [et al.] // Новые направления развития приборостроения : материалы 9-й международной научно-технической конференции молодых ученых и студентов, Минск, 20–22 апреля 2016 г. : в 2 т. / Белорусский национальный технический университет ; редкол.: О. К. Гусев [и др.]. – Минск, 2016. – Т. 2. - С. 30.
      2016-09-22

    • CW Tm:KLu(WO4)2 microchip laser 

      Loiko, P. A.; Serres, J. M.; Mateos, X.; Yumashev, K. V.; Kuleshov, N. V.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (БНТУ, 2014)
      CW Tm:KLu(WO4)2 microchip laser / P. A. Loiko [и др.] // Приборостроение-2014 : материалы 7-й Международной научно-технической конференции (19–21 ноября 2014 года, Минск, Республика Беларусь) / ред. колл.: О. К. Гусев [и др.]. – Минск : БНТУ, 2014. – С. 231-232.
      2015-03-19

    • Diode-pumped passively Q-switched self-frequency-doubled ND:CNGS laser 

      Zhang, X.; Zhou, Y.; Yasukevich, A. S.; Loiko, P. A.; Mateos, X.; Xu, X.; Guo, S.; Wang, Z. (Optical Society of America, 2017)
      With Cr4+:YAG as a saturable absorber, a passively Q-switched self-frequencydoubled (SFD) laser based on a trigonal Nd:Ca3NbGa3Si2O14 (Nd:CNGS) silicate crystal was demonstrated for the first time. The maximum average output power at 532 nm was 16.2 mW, and the corresponding pulse repetition frequency, single pulse energy, pulse duration and peak power were 2.25 kHz, 7.2 μJ, 13.7 ...
      2023-12-15

    • Graphene Q-Switched Compact Yb: YAG Laser 

      Serres, J. M.; Jambunathan, V.; Mateos, X.; Loiko, P.; Lucianetti, A.; Mocek, T.; Yumashev, K.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (2015)
      We describe a compact Yb: YAG laser Q-switched by a graphene-based saturable absorber and pumped by a laser diode at 932 or 969 nm. The compact laser generates a maximum average output power value of 185 mW at 1032 nm with a slope efficiency value of 12%. The shortest duration of the Q-switched pulse achieved is 228 ns at a repetition frequency of 285 kHz. The maximum pulse energy ...
      2018-03-06

    • Graphene Q-switched waveguide laser at 1.83 μm 

      Kifle, E.; Mateos, X.; Loiko, P. A.; Yumashev, K. V.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (БНТУ, 2016)
      Graphene Q-switched waveguide laser at 1.83 μm / E. Kifle [et al.] // Приборостроение-2016 : материалы 9-й международной научно-технической конференции, Минск, 23-25 ноября 2016 г. / Белорусский национальный технический университет ; редкол.: О. К. Гусев [и др.]. – Минск, 2016. – С. 236-237.
      2017-03-23

    • Ho:KLuW laser passively q-switched by a PbS quantum dot-doped glass 

      Serres, J. M.; Mateos, X.; Aguilo, M.; Diaz, F.; Loiko, P. A.; Malyarevich, A. M.; Yumashev, K. V. (БНТУ, 2016)
      Ho:KLuW laser passively q-switched by a PbS quantum dot-doped glass / J. M. Serres [et al.] // Новые направления развития приборостроения : материалы 9-й международной научно-технической конференции молодых ученых и студентов, Минск, 20–22 апреля 2016 г. : в 2 т. / Белорусский национальный технический университет ; редкол.: О. К. Гусев [и др.]. – Минск, 2016. – Т. 2. - С. 57.
      2016-09-23

    • Ho:KLuW microchip laser intracavity pumped by a diode-pumped Tm:KLuW laser 

      Serres, J. M.; Loiko, P. A.; Mateos, X.; Yumashev, K. V.; Kuleshov, N. V.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (Springer, 2015)
      A compact intracavity-pumped microchip Ho laser is realized using stacked Tm:KLuW/Ho:KLuW crystals pumped by a laser diode at 805 nm; both crystals are cut for light propagation along the Ng optical indicatrix axis and emit with polarization along the Nm axis. Maximum CW output power of 285 mW is achieved at a wavelength of 2080 nm for 5.6 W absorbed pump power in the Tm:KLuW ...
      2018-09-14

    • Microchip laser operation of Tm,Ho:KLu(WO4)2 crystal 

      Loiko, P.; Serres, J. M.; Mateos, X.; Yumashev, K.; Kuleshov, N.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (2014)
      A microchip laser is realized on the basis of a monoclinic Tm,Ho-codoped KLu(WO4)2 crystal cut for light propagation along the Ng optical indicatrix axis. This crystal cut provides positive thermal lens with extremely weak astigmatism, S/M = 4%. High sensitivity factors, M = dD/dPabs, of 24.9 and 24.1 m−1/W for the mg- and pg- tangential planes are calculated with respect to the ...
      2017-11-15

    • Passive Q-switching of a Tm,Ho:KLu(WO4)2 microchip laser by a Cr:ZnS saturable absorber 

      Serres, Y. M.; Loiko, P. A.; Mateos, X.; Jambunathan, V.; Yasukevich, A. S.; Yumashev, K. V.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (Optical Society of America, 2016)
      A diode-pumped Tm;Ho:KLu WO42 microchip laser passively Q-switched with a Cr:ZnS saturable absorber generated an average output power of 131 mW at 2063.6 nm with a slope efficiency of 11% and a Q-switching conversion efficiency of 58%. The pulse characteristics were 14 ns∕9 μJ at a pulse repetition frequency of 14.5 kHz. With higher modulation depth of the saturable absorber, 9 ...
      2016-05-12

    • Passive Q-switching of Yb bulk lasers by a graphene saturable absorber 

      Loiko, P. A.; Serres, J. M.; Mateos, X.; Liu, G.; Zhang, H.; Yasukevich, A. S.; Yumashev, K. V.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (Springer, 2016)
      Compact Yb:KLu(WO4)2 and Yb:LuVO4 lasers diode-pumped at 978 nm are passively Q-switched by a single-layer graphene saturable absorber. The Yb:KLu(WO4)2 laser generated 165 ns/0.49 μJ pulses at 1030 nm with 170 mW average output power and 12 % slope efficiency. With the Yb:LuVO4 laser, 152 ns/0.83 μJ pulses were achieved. The output power reached 300 mW at 1024 nm, and the slope ...
      2016-05-11

    • Spectroscopy of tetragonal Eu:NaGd(WO4)2 crystal 

      Loiko, P. A.; Vilejshikova, E. V.; Mateos, X.; Serres, J. M.; Dashkevich, V. I.; Orlovich, V. A.; Yasukevich, A. S.; Kuleshov, N. V.; Yumashev, K. V.; Grigoriev, S. V.; Vatnik, S. M.; Bagaev, S. N.; Pavlyuk, A. A. (2016)
      We report on growth and detailed spectroscopic study of Eu3ю-doped tetragonal sodium gadolinium double tungstate, Eu:NaGd(WO4)2, a new promising crystal for deep-red lasers. Large-volume crystal doped with 4.9 at.% Eu is grown by Czochralski method along the [001] crystallographic direction. Absorption of Eu3ю ions is studied at room temperature (RT) and at 6 K. For the absorption ...
      2017-11-18

    • Structure and nonlinear optical properties of novel transparent glass-ceramics based on Co2+:ZnO nanocrystals 

      Loiko, P. A.; Dymshits, O. S.; Vitkin, V. V.; Skoptsov, N. A.; Zhilin, A. A.; Shemchuk, D. V.; Tsenter, M. Ya.; Bogdanov, K. V.; Malyarevich, A. M.; Glazunov, I. V.; Mateos, X.; Yumashev, K. V. (2016)
      Transparent glass-ceramics (GCs) based on Co2+:ZnO nanocrystals (mean diameter, 11 nm) are synthesized on the basis of cobalt-doped glasses of the K2O–ZnO–Al2O3–SiO2 system. For these GCs, the absorption band related to the 4A2(4F) → 4T1(4F) transition of Co2+ ions in tetrahedral sites spans until ~1.73 μm. Saturation of the absorption is demonstrated at 1.54 μm, with a saturation ...
      2017-11-18

    • Thermal Lensing and Multiwatt Microchip Laser Operation of Yb:YCOB Crystals 

      Loiko, P.; Serres, J. M.; Mateos, X.; Yu, H.; Zhang, H.; Liu, J.; Yumashev, K.; Griebner, U.; Petrov, V.; Aguilo, M.; Diaz, F. (2016)
      Thermal lensing is studied in monoclinic Yb:Ca4YO(BO3)(3) (Yb:YCOB) oxoborate crystals cut along the optical indicatrix axes. For all orientations, the thermal lens is positive. In the Z-cut crystal, the sensitivity factors of the thermal lens are MZ-X = 2.4 and MZ-Y = 2.8 m(-1)/W (for E parallel to X), and the astigmatism degree is as low as S/M = 14%. The positive thermal lens ...
      2018-03-18

    • Thermo-optic properties of Yb:Lu2O3 single crystals 

      Loiko, P. A.; Yumashev, K. V.; Schödel, R.; Peltz, M.; Liebald, C.; Mateos, X.; Deppe, B. (Springer, 2015)
      A detailed study of thermo-optic properties of 1.5 at.% Yb:Lu2O3 single crystal is performed. Thermo-optic dispersion formulas are derived for dn/dT coefficient and thermal coefficient of the optical path. At the wavelength of 1.03 μm, dn/dT = 5.8 × 10−6 K−1. High-precision temperature-dependent measurements of the thermal expansion coefficient α are performed. At the room ...
      2018-09-17

    • Tm:KLu(WO4)2 microchip laser Q-switched by a graphene-based saturable absorber 

      Serres, J. M.; Loiko, P.; Mateos, X.; Yumashev, K.; Griebner, U.; Petrov, V.; Aguilo, M.; Diaz, F. (2015)
      We report on the first Tm-doped double tungstate microchip laser Q-switched with graphene using a Tm:KLu(WO4)2 crystal cut along the Ng dielectric axis. This laser generates a maximum average output power of 310 mW with a slope efficiency of 13%. At a repetition rate of 190 kHz the shortest pulses with 285 ns duration and 1.6 μJ energy are achieved.
      2017-11-18