Browsing by Author "Poklonski, N. A."

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    • Design of Peltier Element Based on Semiconductors with Hopping Electron Transfer via Defects 

      Poklonski, N. A.; Vyrko, S. A.; Kovalev, A. I.; Anikeev, I. I.; Gorbachuk, N. I. (БНТУ, 2021)
      The study of thermoelectric properties of crystalline semiconductors with structural defects is of practical interest in the development of radiation-resistant Peltier elements. In this case, the spectrum of energy levels of hydrogen-like impurities and intrinsic point defects in the band gap (energy gap) of crystal plays an important role. The purpose of this work is to analyze ...
      2021-03-18

    • High-Frequency Capacitor with Working Substance "Insulator–Undoped Silicon–Insulator" 

      Poklonski, N. A.; Anikeev, I. I.; Vyrko, S. A. (БНТУ, 2022)
      The study of the parameters of capacitors with various working substances is of interest for the design and creation of electronic elements, in particular for the development of high-frequency phase-shifting circuits. The purpose of the work is to calculate the high-frequency capacitance of a capacitor with the working substance insulator undoped silicon insulator at different ...
      2022-12-29

    • Inductive Type Impedance of Mo/n-Si Barrier Structures Irradiated with Alpha Particles 

      Poklonski, N. A.; Kovalev, A. I.; Usenko, K. V.; Ermakova, E. A.; Gorbachuk, N. I.; Lastovski, S. B. (БНТУ, 2023)
      In silicon microelectronics, flat metal spirals are formed to create an integrated inductance. However, the maximum specific inductance of such spirals at low frequencies is limited to a value of the order of tens of microhenries per square centimeter. Gyrators, devices based on operational amplifiers with approximately the same specific inductance as spirals, are also used. ...
      2023-04-13

    • Low-Frequency Admittance of Capacitor with Working Substance “Insulator – Partially Disordered Semiconductor – Insulator” 

      Poklonski, N. A.; Anikeev, I. I.; Vyrko, S. A. (БНТУ, 2021)
      The study of the electrophysical characteristics of crystalline semiconductors with structural defects is of practical interest in the development of radiation-resistant varactors. The capacitance-voltage characteristics of a disordered semiconductor can be used to determine the concentration of point defects in its crystal matrix. The purpose of this work is to calculate the ...
      2021-10-15