Diode-pumped passively mode-locked Er,Yb:YAl3(BO3)4laser at 1.5-1.6 μm

Lagatsky, A. A.; Kisel, V. E.; Troshin, A. E.; Tolstik, N. A.; Kuleshov, N. V.; Leonyuk, N. I.; Zhukov, A. E.; Rafailov, E. U.; Sibbett, W.

Authors

Date

2008

Bibliographic entry

Diode-pumped passively mode-locked Er,Yb:YAl3(BO3)4 laser at 1.5-1.6 μm // A. A. Lagatsky [et. al.] // Optics letters.– 2008. – Vol. 33, № 1. – P. 83-85.

Abstract

We report the first demonstration to our knowledge of passive mode locking in a diode-pumped Er3+ and Yb3+ codoped YAl3(BO3)4 laser operating in the 1.5-1.6 μm spectral region. Low-loss GaInNAs quantum-well semiconductor saturable absorber mirrors are used for the initiation and stabilization of the ultrashort-pulse generation. Pulses as short as 4.8 ps were generated at 1530 nm with an average output power up to 280 mW for 2 W of absorbed pump power produced by a high-brightness tapered 980 nm laser diode. Passive mode locking has also been demonstrated around 1555 nm with typical average powers of around 100 mW and pulse durations of 5.1 ps.