Passive mode locking of a Tm,Ho:KY(WO4)2 laser around 2 μm

dc.contributor.author	Lagatsky, A. A.	en
dc.contributor.author	Fusari, F.	en
dc.contributor.author	Calvez, S.	en
dc.contributor.author	Gupta, J. A.	en
dc.contributor.author	Kisel, V. E.	en
dc.contributor.author	Kuleshov, N. V.	en
dc.contributor.author	Brown, C. T. A.	en
dc.contributor.author	Dawson, M. D.	en
dc.contributor.author	Sibbett, W.	en
dc.date.accessioned	2012-01-23T12:37:01Z
dc.date.available	2012-01-23T12:37:01Z
dc.date.issued	2009
dc.identifier.citation	Passive mode locking of a Tm,Ho:KY(WO4)2 laser around 2 μm / A. A. Lagatsky [et al.] // Optics letters.– 2009. – Vol. 34, № 17. – P. 2587-2589.	en
dc.identifier.uri	https://rep.bntu.by/handle/data/1019
dc.description.abstract	We report the first demonstration, to our knowledge, of passive mode locking in a Tm3+, Ho3+-codoped KY(WO4)2 laser operating in the 2000-2060 nm spectral region. An InGaAsSb-based quantum well semiconductor saturable absorber mirror is used for the initiation and stabilization of the ultrashort pulse generation. Pulses as short as 3.3 ps were generated at 2057 nm with average output powers up to 315 mW at a pulse repetition frequency of 132 MHz for 1.15 W of absorbed pump power at 802 nm from a Ti:sapphire laser.	en
dc.language.iso	en_US	en
dc.publisher	Optical Society of America	ru
dc.title	Passive mode locking of a Tm,Ho:KY(WO4)2 laser around 2 μm	en
dc.type	Article	ru