Ultrafast laser inscribed Yb:KGd(WO4)2 and Yb:KY(WO4)2 channel waveguide lasers

dc.contributor.author	Bain, F. M.	en
dc.contributor.author	Lagatsky, A. A.	en
dc.contributor.author	Thomson, R. R.	en
dc.contributor.author	Psaila, N. D.	en
dc.contributor.author	Kuleshov, N. V.	en
dc.contributor.author	Kar, A. K.	en
dc.contributor.author	Sibbett, W.	en
dc.contributor.author	Brown, C. T. A.	en
dc.date.accessioned	2012-01-23T13:40:25Z
dc.date.available	2012-01-23T13:40:25Z
dc.date.issued	2009
dc.identifier.citation	Ultrafast laser inscribed Yb:KGd(WO4)2 and Yb:KY(WO4)2 channel waveguide lasers / F. M. Bain [et al.] // Optics letters.– 2009. – Vol. 17, № 25. – P. 22417-22422.	en
dc.identifier.uri	https://rep.bntu.by/handle/data/1026
dc.description.abstract	We demonstrate laser action in diode-pumped microchip monolithic cavity channel waveguides of Yb:KGd(WO4)2 and Yb:KY(WO4)2 that were fabricated by ultrafast laser writing. The maximum output power achieved was 18.6 mW with a threshold of approximately 100 mW from an Yb:KGd(WO4)2waveguide laser operating at 1023 nm. The propagation losses for this waveguide structure were measured to be 1.9 dBcm−1.	en
dc.language.iso	en_US	en
dc.publisher	Optical Society of America	en
dc.title	Ultrafast laser inscribed Yb:KGd(WO4)2 and Yb:KY(WO4)2 channel waveguide lasers	en
dc.type	Article	ru