SiC PVT衬底/CVD外延生长法与缺陷
| dc.contributor.author | Si, Zhangxu | ru |
| dc.coverage.spatial | Минск | ru |
| dc.date.accessioned | 2022-03-03T11:19:39Z | |
| dc.date.available | 2022-03-03T11:19:39Z | |
| dc.date.issued | 2021 | |
| dc.identifier.citation | Si, Zhangxu. SiC PVT衬底/CVD外延生长法与缺陷 / Zhangxu Si // Новые горизонты - 2021 : сборник материалов VIII Белорусско-Китайского молодежного инновационного форума, 11-12 ноября 2021 года / Белорусский национальный технический университет. – Минск : БНТУ, 2021. – Т. 1. – С. 148-149. | ru |
| dc.identifier.uri | https://rep.bntu.by/handle/data/109958 | |
| dc.description.abstract | As the representative of the third generation of new wide band gap semiconductors, SiC has excellent physical, chemical and electrical properties.In the field of power semiconductor, especially in high power, high voltage and some special environments, it has a good application prospect.In this paper, some of its physical properties are introduced, and then the growth method and the defects in the growth process are explained. | ru |
| dc.language.iso | cn | ru |
| dc.publisher | БНТУ | ru |
| dc.title | SiC PVT衬底/CVD外延生长法与缺陷 | ru |
| dc.type | Working Paper | ru |
