| dc.contributor.author | Serres, Y. M. | en |
| dc.contributor.author | Loiko, P. A. | en |
| dc.contributor.author | Mateos, X. | en |
| dc.contributor.author | Jambunathan, V. | en |
| dc.contributor.author | Yasukevich, A. S. | en |
| dc.contributor.author | Yumashev, K. V. | en |
| dc.contributor.author | Petrov, V. | en |
| dc.contributor.author | Griebner, U. | en |
| dc.contributor.author | Aguilo, M. | en |
| dc.contributor.author | Diaz, F. | en |
| dc.date.accessioned | 2016-05-12T08:00:07Z | en |
| dc.date.available | 2016-05-12T08:00:07Z | |
| dc.date.issued | 2016 | |
| dc.identifier.citation | Passive Q-switching of a Tm,Ho:KLu(WO4)2 microchip laser by a Cr:ZnS saturable absorber / J. M. Serres [et al.] // Applied Optics. – 2016. – Vol. 55, № 14. – P. 3757-3763. | en |
| dc.identifier.uri | https://rep.bntu.by/handle/data/23732 | |
| dc.description.abstract | A diode-pumped Tm;Ho:KLu WO42 microchip laser passively Q-switched with a Cr:ZnS saturable absorber generated an average output power of 131 mW at 2063.6 nm with a slope efficiency of 11% and a Q-switching conversion efficiency of 58%. The pulse characteristics were 14 ns∕9 μJ at a pulse repetition frequency of 14.5 kHz. With higher modulation depth of the saturable absorber, 9 ns∕10.4 μJ∕8.2 kHz pulses were generated at 2061.1 nm, corresponding to a record peak power extracted from a passively Q-switched Tm,Ho laser of 1.15 kW. A theoretical model is presented, predicting the pulse energy and duration. The simulations are in good agreement with the experimental results. | en |
| dc.language.iso | en | en |
| dc.publisher | Optical Society of America | en |
| dc.title | Passive Q-switching of a Tm,Ho:KLu(WO4)2 microchip laser by a Cr:ZnS saturable absorber | en |
| dc.type | Article | ru |
