Tm:KLu(WO4)2 microchip laser Q-switched by a graphene-based saturable absorber

dc.contributor.author	Serres, J. M.
dc.contributor.author	Loiko, P.
dc.contributor.author	Mateos, X.
dc.contributor.author	Yumashev, K.
dc.contributor.author	Griebner, U.
dc.contributor.author	Petrov, V.
dc.contributor.author	Aguilo, M.
dc.contributor.author	Diaz, F.
dc.date.accessioned	2017-11-18T08:24:26Z
dc.date.available	2017-11-18T08:24:26Z
dc.date.issued	2015
dc.identifier.citation	Tm:KLu(WO4)2 microchip laser Q-switched by a graphene-based saturable absorber / J. M. Serres [et al.] // Optics Express. – 2015. – Vol. 23, № 11. – P. 14108-14113.	en
dc.identifier.uri	https://rep.bntu.by/handle/data/34717
dc.description.abstract	We report on the first Tm-doped double tungstate microchip laser Q-switched with graphene using a Tm:KLu(WO4)2 crystal cut along the Ng dielectric axis. This laser generates a maximum average output power of 310 mW with a slope efficiency of 13%. At a repetition rate of 190 kHz the shortest pulses with 285 ns duration and 1.6 μJ energy are achieved.	en
dc.language.iso	en	en
dc.title	Tm:KLu(WO4)2 microchip laser Q-switched by a graphene-based saturable absorber	en
dc.type	Article	ru