| dc.contributor.author | Vlasenko, A. I. | |
| dc.contributor.author | Veleshchuk, V. P. | |
| dc.contributor.author | Gnatyuk, V. A. | |
| dc.contributor.author | Levitskii, S. N. | |
| dc.contributor.author | Vlasenko, Z. K. | |
| dc.contributor.author | Ivlev, G. D. | |
| dc.contributor.author | Gatskevich, E. I. | |
| dc.date.accessioned | 2017-11-22T14:18:29Z | |
| dc.date.available | 2017-11-22T14:18:29Z | |
| dc.date.issued | 2015 | |
| dc.identifier.citation | Acoustic Response to the Action of Nanosecond Laser Pulses on an In/CdTe Thin-Film Heterostructure / A. I. Vlasenko [et al.] // Physics of the Solid State. – 2015. – Vol. 57, № 6. – P. 1089-1094. | en |
| dc.identifier.uri | https://rep.bntu.by/handle/data/34867 | |
| dc.description.abstract | The photothermoacoustic method has been used for diagnostics of thermobarodynamic processes in the metal In(400 nm)/semiconductor (CdTe) thin-film system under nanosecond laser irradiation (7 ns, λ = 532 nm) in natural conditions (in air) and in a liquid medium (water). From the analysis of the data obtained, the dependence of the pressure induced in the energy-release region on the irradiation energy den-sity has been established and the melting threshold of In film has been determined. Under irradiation of In/CdTe in water, the pressure is higher than in air: 17 times higher at the melting threshold of In film and 30 times higher at twice the temperature. It has been found that the laser pulse treatment of In/CdTe/Au samples in water makes it possible to obtain diode structures with better parameters: smaller leak currents and a steeper current-voltage characteristic under the forward bias of the p-n junction. | en |
| dc.language.iso | en | en |
| dc.title | Acoustic Response to the Action of Nanosecond Laser Pulses on an In/CdTe Thin-Film Heterostructure | en |
| dc.type | Article | ru |
