Измерение параметров свободных и локализованных носителей заряда в объектах с индуцированной неоднородностью

Abstract

1п this work the procedure of measurement of charge carrier parameters in non-homogeneous object of measurement — monocrystal indium arsenide with inversion channels on the surface is proposed. Analysis that was held shows that using of integral characteristic of formation process of complex integral galvanomagnet measurement signal in selected object allows us to determinate localparameters of free charge carriers in the volume and in surface channel of crystal, and also of localized charge carriers on the surface and in oxide film together with separańon on positive and negative sign components. Discussed methods can be interpreted as realization of the model of non-homogeneous object described as superposition ofareas with homogeneous charge carrierparameters. Measurement procedure includes selection of regime of measurements, identification of charge carrier type in corresponding homogeneous area, and measurement based on homogeneous object model.