| dc.contributor.author | Chen, Jianjin | ru |
| dc.contributor.author | Yu, Xiaoye | ru |
| dc.coverage.spatial | Минск | ru |
| dc.date.accessioned | 2021-06-17T06:08:17Z | |
| dc.date.available | 2021-06-17T06:08:17Z | |
| dc.date.issued | 2021 | |
| dc.identifier.citation | Chen, Jianjin. Научная секция «материалы и химические продукты. Машиностроение и металлургия» = An uv-vis-ir light detection film based on photoelectric effect / Jianjin Chen, Xiaoye Yu // II Китайско-белорусский молодежный конкурс научно-исследовательских и инновационных проектов : сборник материалов конкурса, 20-21 мая 2021 г. / Белорусский национальный технический университет ; Научно-технологический парк БНТУ «Политехник» ; Институт Конфуция по науке и технике БНТУ. – Минск : БНТУ, 2021. – С. 77-78. | ru |
| dc.identifier.uri | https://rep.bntu.by/handle/data/94886 | |
| dc.description.abstract | In this study, Al1-xInxN films with different band gap energy (Eg) were deposited by radiofrequency (RF) magnetron sputtering. The Eg of films shows a red-shift from 2.95 to 2.20 eV. We investigated the photo-response behaviors of the as-grown films under the illumination of LED with a center wavelength of 365, 532, and 650 nm, respectively. The wavelength of the detected light can be determined by the increment of photocurrent. The rise time and fall time of the photocurrent are 3.6 ± 0.1 s and 6.5 ± 1 s, respectively, which is four times faster than the typical MoS2 photodetectors. | ru |
| dc.language.iso | en | ru |
| dc.publisher | БНТУ | ru |
| dc.title | Научная секция «материалы и химические продукты. Машиностроение и металлургия» | ru |
| dc.title.alternative | An uv-vis-ir light detection film based on photoelectric effect | ru |
| dc.type | Working Paper | ru |
